- Dynamic Random Access Memory
(DRAM) Competitor Market Share Scenario Worldwide (in %): 2019 & 2025
In the 2004 time frame, costs must be relative to anticipated dynamic random access memory
(DRAM) at $500 per gigabyte and hard disks at $2 per gigabyte, and no greater than $50 per gigabyte to be competitive.
However, in 2007, nonvolatile magnetoresistive random access memory
(MRAM) technology will begin to reach mass-scale production.
This property has motivated a strong interest in using spin-valves as recording bits in non-volatile, magnetic random access memory
Analysts said dynamic random access memory
or DRAM chips have just started to be used in mobile phones, but their use is expected to grow rapidly in response to the spread of advanced handsets.
The world of random access memory
, or RAM, is future oriented, with significant changes in the works.
''Particularly strong are the company's divided-bit line NOR (DINOR) flash memory with static random access memory
(SRAM) multichip package products for cellular phones, its satellite communications business, and its industrial/factory automation equipment,'' S&P said in a news release.
Designed for space and military applications, it will replace current memory and storage solutions such as flash memory, electrically erasable programmable read-only memory (EEPROM), dynamic random access memory
(DRAM), and hard disk drive devices.
Using tunneling magnetic junction random access memory
(TMJ-RAM for short), IBM's Stuart Parkin is devising new memory chips that will be ultra-fast, will consume less power, and will retain stored data when a computer shuts down.
The SmartSCM system combines a modem controller, data pump, read-only memory, random access memory
and a universal silicon data access arrangement (DAA) telephone-network interface on a single device, to reduce design time, board space and engineering and systems costs required to incorporate modem connectivity into various e-appliances.
South Korean Scientists have found a way of reducing the cost of producing ferroelectric random access memory
The benchmark index rose 13.6 points to 950.53 due to soaring prices of dynamic random access memory