MR

(redirected from magnetoresistance)
Also found in: Dictionary, Thesaurus, Medical, Legal, Encyclopedia, Wikipedia.

MR

The two-character ISO 3166 country code for MAURITANIA.

MR

1. ISO 3166-1 alpha-2 code for the Republic of Mauritania. This is the code used in international transactions to and from Mauritanian bank accounts.

2. ISO 3166-2 geocode for Mauritania. This is used as an international standard for shipping to Mauritania. Each subdivision has its own code with the prefix "MR." For example, the code for the District of Nouakchott is ISO 3166-2:MR-NKC.
References in periodicals archive ?
Chien, "Large magnetoresistance of electrodeposited single-crystal bismuth thin films," Science, vol.
Zinn, "Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange," Physical Review B, Vol.
Arulraj, "Giant magnetoresistance, charge-ordering and related aspects of manganase oxides," Current Opinion in Solid State and Materials Science, vol.
The Hall angle, defined as the ratio of the diagonal resistive response and the Hall resistivity (magnetoresistance), cot [[theta].sup.N.sub.H] = [[rho].sup.N.sub.H]/[[rho].sup.N.sub.H], presents a quadratic behavior with temperature, as showed in figure 10.
Advances in giant magnetoresistance biosensors with magnetic nanoparticle tags: review and outlook.
Hence, as a function of B the 2CT gives rise to a parabolic positive relative magnetoresistance before saturating to [n.sub.0]/[absolute value of (n - p)] when B [equivalent] [B.sub.1], which is valid as long as [[mu].sub.q]B [much less than] 1.
Giant magnetoresistance effect and magnetic multilayers
MultilDimension says it is the first to use the tunnelling magnetoresistance TMR technology for sensors.
It is desired to deduce an expression for spin-polarization and giant magnetoresistance. This is done as follows:
(MDT), a supplier of magnetic sensors specialising in tunnelling magnetoresistance (TMR) technology, has launched a range of three linear magnetic field sensors, named MMLD47F, MMLP57F and MMLP57H.
Anisotropic Magnetoresistance occurs in certain ferrous materials and can be applied as a thin strip to become a resistive element.
Japanese electronic and electrical products manufacturer Toshiba Corporation (Tokyo:6502) (LSE:TOS) is to collaborate with memory semiconductor supplier Hynix Semiconductor Inc (KRX:000660) on the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), the two companies announced today.