Chien, "Large magnetoresistance
of electrodeposited single-crystal bismuth thin films," Science, vol.
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in layered magnetic structures with antiferromagnetic interlayer exchange," Physical Review B, Vol.
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The Hall angle, defined as the ratio of the diagonal resistive response and the Hall resistivity (magnetoresistance
), cot [[theta].sup.N.sub.H] = [[rho].sup.N.sub.H]/[[rho].sup.N.sub.H], presents a quadratic behavior with temperature, as showed in figure 10.
Advances in giant magnetoresistance
biosensors with magnetic nanoparticle tags: review and outlook.
Hence, as a function of B the 2CT gives rise to a parabolic positive relative magnetoresistance
before saturating to [n.sub.0]/[absolute value of (n - p)] when B [equivalent] [B.sub.1], which is valid as long as [[mu].sub.q]B [much less than] 1.
effect and magnetic multilayers
MultilDimension says it is the first to use the tunnelling magnetoresistance
TMR technology for sensors.
It is desired to deduce an expression for spin-polarization and giant magnetoresistance
. This is done as follows:
(MDT), a supplier of magnetic sensors specialising in tunnelling magnetoresistance
(TMR) technology, has launched a range of three linear magnetic field sensors, named MMLD47F, MMLP57F and MMLP57H.
occurs in certain ferrous materials and can be applied as a thin strip to become a resistive element.
Japanese electronic and electrical products manufacturer Toshiba Corporation (Tokyo:6502) (LSE:TOS) is to collaborate with memory semiconductor supplier Hynix Semiconductor Inc (KRX:000660) on the joint development of Spin-Transfer Torque Magnetoresistance
Random Access Memory (MRAM), the two companies announced today.