HTM [V.sub.oc] (V) [(n-BuO).sub.4]ZnPc
Forward bias 0.896 [+ or -] 0.009 Reverse bias 0.928 [+ or -] 0.04 Spiro-OMeTAD
Forward bias 0.903 [+ or -] 0.02 Reverse bias 0.928 [+ or -] 0.04 HTM [J.sub.sc] (mA/[cm.sup.2]) [(n-BuO).sub.4]ZnPc
Forward bias 12.1 [+ or -] 1.2 Reverse bias 14.5 [+ or -] 1.9 Spiro-OMeTAD
Forward bias 13.6 [+ or -] 0.9 Reverse bias 14.5 [+ or -] 1.9 HTM FF (%) [(n-BuO).sub.4]ZnPc
Forward bias 57.0 [+ or -] 3.1 Reverse bias 61.8 [+ or -] 2.6 Spiro-OMeTAD
Forward bias 55.2 [+ or -] 4.0 Reverse bias 61.8 [+ or -] 2.6 HTM PCE (%) [(n-BuO).sub.4]ZnPc
Forward bias 6.06% [+ or -] 0.74 Reverse bias 9.00% [+ or -] 0.21 Spiro-OMeTAD
Forward bias 6.75% [+ or -] 0.19 Reverse bias 8.61% [+ or -] 0.60 Table 4: Calculated synthesis cost for 1 g of [(n-BuO).sub.4]ZnPc.
When the
forward bias voltages are 0, 1.5, 1.8, 2 V, respectively, the transmission spectrum of the micro-nano SOI micro-ring electro-optic modulation has been tested, as shown in Figure 11.
Thus, the frictional force can be controlled through the use of laser processing under a
forward bias voltage.
Our experimental results showed that charge transport in these compounds take place via different mechanism in reverse and
forward bias conditions.
The rectification ratio--the rate of current density under
forward bias to reverse bias--of these samples were calculated as 9.4 for sample 2, 4.5 for sample 3, 5.2 for sample 4 and 4.9 for sample 5.
As shown in this figure, the intrinsic PN diode in
forward bias improves the current of the diode as compared to conventional diode in Figure 1(c), in which the PN diode is reverse biased in the forward region.
[23.] Ranaldo, Angelo and Sarkar, Asani (2008) Exchange rate risk, transactions costs and the
forward bias puzzle, Swiss National Bank, [http://www.hkimr.org/uploads/conference_detail/521/con_paper_0_510_session-7-3_sarkarranaldo_1sep08.
It requires 1.2 V to operate in
forward bias state, while above 10 V to operate in reverse bias state at 10 GHz.
The diode is simulated using the actual diode current-voltage equation for
forward bias, while using a circuit model consisting of resistor and capacitor in parallel for reversed bias in the presence of both axial and skewed FSS grids, which provides more accurate simulation results compared to simulating the diode as an open circuit (OC) for the OFF state and a short circuit (SC) for the ON state [16].
The reverse saturation current ([I.sub.0]) can be obtained by extrapolating the linear portion of the
forward bias in the ln I-V plot to the intercept point on the current axis at zero-bias (V = 0) and is given by
This LVFR family utilizes a trench MOS structure that enables an enhanced conduction zone under
forward bias, resulting in significant reduction in forward voltage drop.
No [F.sub.r] peaks appear in
forward bias. The [I.sub.d]-[V.sub.d] curve is measured experimentally (Fig.