The four main elements of the diffusion process
include the innovation itself, the channels the innovation is communicated through, the time period when the process takes place, and the social system the innovation is diffused through.
These elements are identifiable in any diffusion process
. In this particular case, distance education is the innovation we will examine within NSU's history through Rogers' diffusion of innovations theory.
According to him, 'the NEC in session also considered the diffusion of the R- APC with the PDP and a committee to this effect was set up while the NEC also approved the template to be used in the diffusion process
in the each of the Federation.
Few studies, such as the research conducted by Park and Berry (2014) explore the origin of PFP and explain the diffusion process
of PFP from the private sector to the public sector.
This section describes the details of proposed method based on variational level set method and the diffusion process
to level set function.
Several factors can influence thermal diffusion process
such as surface conditions, chemical treatments, concentration of defects in carbon, and silicon sublattices.
Here, we analyze the surface effects on a diffusion process
by considering one-dimensional semi-infinite media in contact with a surface, which may adsorb (and desorb) particles or absorb the particles to perform a reaction process with the formation of another kind of particle.
Besides, they almost only describe the one-hop dissemination so that they fail to characterize the whole diffusion process
in the network.
The cold diffusion process
uses the natural principles of capillarity and evaporation to gradually release fragrance without heat.
The activation energy of adsorption was found to be 13.09 k J/mol for particle diffusion process
, 13.12 k J/mol for film diffusion process
and 14.11k J/mol according to pseudo first order equation.
In our method the diffusion process
is carried out in air atmosphere in condition of surface oxidation to create a flow of vacancies of Si and C from the crystal surface into the bulk of the sample .