The vertical flash memory cell
is based on well-known SGT technology and uses single crystalline silicon material.
The proposed memory cell
has been designed at a dimension of 0.
Forrest anticipates that an array of polymer memory cells
on a 1-millimeter-square chip could store 1 megabit of information.
Hitachi Ltd has developed an AG-AND type flash memory cell
as high speed next generation AND-type flash memory for gigabyte-generation.
TELECOMWORLDWIRE-22 May 2001-AMD unveils new memory cell
architecture (C)1994-2001 M2 COMMUNICATIONS LTD http://www.
As a result of this new architecture, combined with our trench memory cell
design and our advanced 0.
Rather than encode Is and Os on the basis of the amount of charge stored in a memory cell
, as conventional memory chips do, the UCLA approach encodes data in catenane molecules, each of which has two interlocked rings.