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FIN

GOST 7.67 Latin three-letter geocode for Finland. The code is used for transactions to and from Finnish bank accounts and for international shipping to Finland. As with all GOST 7.67 codes, it is used primarily in Cyrillic alphabets.
Farlex Financial Dictionary. © 2012 Farlex, Inc. All Rights Reserved
References in periodicals archive ?
Global (United States, European Union and China) FinFET Technology Product Types In-Depth: , 22nm, 20nm, 16nm, 14nm, 10nm & 7nm
Overview of FinFET. FinFET is a double gate 3D transistor and has more benefits than ones of traditional planar CMOS.
DC performance and variability of the dopant-segregated SOI FinFETs with different [T.sub.sili] are analyzed in terms of the DC parameters extracted from Y-function method and Spearman correlation, respectively.
(1.) Tang, H., et al., "Diagnosing Timing Related Cell Internal Defects for FinFET Technology," International Symposium on VLSI Design Automation and Test, 2014.
To carry out the energy performance study of the multimode adder, a 32 nm FinFET technology using 64bit carry propagate adder has first been synthesized nominal 1.3 V supply voltage with LTspice Tool .That adder is used as a reference for alternative multimode adders.
In addition, use of fully-depleted FinFET transistors brings enhanced manufacturing capabilities to overcome scaling limitations.
Jha, "Low-power FinFET circuit synthesis using multiple supply and threshold voltages," ACM J.
The FinFET standard model is based on the Berkeley's Berkeley Short-channel IGFET Model-Common Multigate (BSIM-CMG) SPICE library.
To meet performance and cost goals, device manufacturers are forced to pursue creative new technologies such as FinFETs (3D transistors) and 3D IC integration schemes with bumps, pillars, and through-silicon vias (TSVs).
However, in this paper, this topology is implemented based on the optimal configurations of the four-terminal FinFET devices.
Called finFETs, for fin field-effect-transistors, researchers from around the world have been working to perfect the devices as potential replacements for conventional transistors.
Faraday Technology Corporation (TWSE:3035), an ASIC design service and IP provider, has announced that it is leveraging Samsung FinFET platforms to extend its ASIC design solutions in next-generation applications, such as artificial intelligence (AI), 5G/infrastructure networking, blockchain, cloud storage, high-performance computing (HPC), AR & VR, and high-end imaging, the company said.