MR

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MR

The two-character ISO 3166 country code for MAURITANIA.

MR

1. ISO 3166-1 alpha-2 code for the Republic of Mauritania. This is the code used in international transactions to and from Mauritanian bank accounts.

2. ISO 3166-2 geocode for Mauritania. This is used as an international standard for shipping to Mauritania. Each subdivision has its own code with the prefix "MR." For example, the code for the District of Nouakchott is ISO 3166-2:MR-NKC.
References in periodicals archive ?
Dagotto, "Nanoscale phase separation and colossal magnetoresistance, the physics of manganites and related compounds," springer-verlag, vol.
Although the MR ratio of the spin-valve system is not large, satisfactorily high magnetoresistance sensitivity was achieved.
2a shows the variation of the giant magnetoresistance, GMR, with the frequency of the induced photon at different values of gate voltage, [V.
Each magnetoresistance curve was examined to determine appropriate limits for the data; some curves required more trimming than others.
Part Three, "Sensors," details Hall effect and magnetoresistance as they apply to sensing position.
Keywords: XMCD, spin valves, nano-oxide layer, magnetoresistance.
Today, nanotechnology appears in computer hard drives, which contain giant magnetoresistance heads that allow for increased storage capacity through nano-thin layers of magnetic materials.
Exploring the Nanoworld' is a web-based resource for teachers, and it includes video downloads of everything from nanoparticle ferrofluid and magnets to self-assembly, as well as ordering information for a 32-page colour activity kit, and even a section showing how LEGO[R] can be used to model polymer crosslinking and magnetoresistance.
Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
STT-MRAM (Spin Transfer Torque - Magnetoresistive Random Access Memory): A memory device that uses magnetoresistance a tendency of a material to change its electrical resistance when a magnetic field is applied externally.