GAAS

(redirected from gallium arsenide)
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Related to gallium arsenide: Gallium Arsenide Laser

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GAAS

References in periodicals archive ?
The long-term potential for this thing is being able to bring the computing power of silicon and the communications capability of gallium arsenide together.
TriQuint Semiconductor designs and manufactures a wide range of high- and low-frequency products across all common high- and low-power ratings using gallium arsenide, surface acoustic wave (SAW) and bulk acoustic wave (BAW) processes for many different communications applications including military, commercial network infrastructure, sat-com, wireless (cellular) base stations and fiber optic networks.
In the 2 years since, the roughly 100 researchers assigned to the project have surmounted many hurdles, including getting gallium arsenide to bond to the entire surface of an underlying layer of STO.
In one such effort, Ralph Jimenez and his coworkers at the University of California, San Diego are using X-ray diffraction techniques to measure changes in the spacing of atoms in laser-blasted gallium arsenide.
an ISO 9001-registered company, designs, develops and supplies high performance gallium arsenide (GaAs) semiconductors for microwave and millimeter-wave wireless communications applications.
Although silicon is by far the most widely used semiconductor today, gallium arsenide has advantages in certain applications.
Gallium nitride offers a five-fold improvement in power density compared to gallium arsenide devices, and makes it ideal for high power radar and communications applications," said Mr.
Called a microcavity resonator, the device consists of a ring or disk made from layered gallium arsenide and aluminum gallium arsenide.
TriQuint, a recognized world leader in gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) technology, offers an unparalleled selection of radio-frequency (RF), microwave and millimeter-wave integrated circuits (ICs) and modules used in mobile phones and base station infrastructure, and GaAs IC foundry services covering frequencies through 80 GHz.
The device constructed by the group consists of an extremely thin film of indium gallium arsenide, 10 nanometers across, sandwiched between layers of gallium arsenide.
Strategy Analytics, the global research and consulting company, has released, "GaAs Industry Forecast: 2003-2008," its five-year outlook for the Gallium Arsenide microelectronics industry, forecasting a compound average growth rate of 7 percent for the 2003-2008 timeframe.
To make gallium arsenide semiconductor wires, the researchers fill the glass capillaries with a liquid gallium compound.