The vertical flash memory cell
is based on well-known SGT technology and uses single crystalline silicon material.
The proposed memory cell
has been designed at a dimension of 0.
Forrest anticipates that an array of polymer memory cells
on a 1-millimeter-square chip could store 1 megabit of information.
Hitachi Ltd has developed an AG-AND type flash memory cell
as high speed next generation AND-type flash memory for gigabyte-generation.
Chip Design Approach Maintains SRAM Stability Despite Temperature and Process Variations and Achieves the World's Smallest Level Memory Cell
TELECOMWORLDWIRE-22 May 2001-AMD unveils new memory cell
architecture (C)1994-2001 M2 COMMUNICATIONS LTD http://www.
As a result of this new architecture, combined with our trench memory cell
design and our advanced 0.
During his 24 year career at Intel, Lai played a critical role in establishing Intel's leadership position in NOR Flash memory, by co-inventing the industry-standard ETOX flash memory cell
and developing nine successive generations of the product.
Rather than encode Is and Os on the basis of the amount of charge stored in a memory cell
, as conventional memory chips do, the UCLA approach encodes data in catenane molecules, each of which has two interlocked rings.
New Memory Cell
Structure Employing Ta2O5 Interfacial Layer